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FPT University|e-Resources > Bài báo khoa học (Scientific Articles) > Articles published by FPT lecturers >
Please use this identifier to cite or link to this item: http://ds.libol.fpt.edu.vn/handle/123456789/2093

Title: Exact calculation of single-electron states in Si-nanocrystal embedded in SiO2
Authors: Nguyen, Hong Quang
Tran, The Trung
Johann, See
Philippe, Dollfus
Keywords: A. Semiconductors
A. Nanostructures
D. Electronic states
Issue Date: 27-Jul-2013
Abstract: Abstract: We present an exact calculation of the single-electron energies and wave-functions for any bound state in a realistic Si-SiO2 spherical quantum dot, including the material dependence of the electron effective mass. The influence of dot radius, confinement barrier potential and barrier-to-dot electron mass ratio on the electronic structure is investigated in detail. The results show that the energy structure shifts down from some tens to some hundreds meV compared to that obtained in the simplified model where the change in ...
Description: 19 pages
URI: http://ds.libol.fpt.edu.vn/handle/123456789/2093
Appears in Collections:Articles published by FPT lecturers

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